Hitachi high-performance tungsten filament scanning electron microscope SU3500
Product Introduction
The SU3500 adopts a brand new electronic optics and image processing system, with a unique six bias design that greatly enhances the low-voltage beam current and improves resolution. The wide low vacuum range is conducive to observing more types of non-conductive samples, especially the automation speed and accuracy of the operating system, which can be completed in just three simple steps. This not only improves the operation speed, but also facilitates beginner operation.
High quality tungsten filament scanning electron microscope provides even better image quality.
By enhancing the analysis capability and operability of scanning electron microscopy with high image quality, Hitachi's advanced technology embodies its unique creativity.
The SU3500 tungsten filament scanning electron microscope has a new electron optical system that achieves a "3kV acceleration voltage and 7nm resolution", and can realize the "real-time stereoscopic observation function" of real-time stereoscopic imaging*1, as well as the "UVD Ultra High Sensitivity Variable Pressure Detector" with higher detection efficiency*1.
It sets new standards for observation and analysis.
*1: Choose by yourself
Hitachi high-performance tungsten filament scanning electron microscope SU3500 features:
(*2)Compared to Hitachi SEM S-3400NWhen observing at low acceleration voltage, the resolution is higher, which can better observe the subtle shapes on the surface of the sample and effectively reduce sample damage
The newly designed electronic optical system and signal processing technology achieve high-speed scanning and low-noise observation
Compared to conventional scanning electron microscopes in the past*2Shorten the automatic function*3About 11 seconds
A "UVD (Ultra High Sensitivity Variable Pressure Detector)" that can observe the subtle shapes of the sample's surface very well under low vacuum*4
It has the "real-time stereoscopic observation function" that realizes real-time stereoscopic imaging*4
(*3)Time may vary depending on the observation conditions
(*4): Optional
Specifications:
project |
description |
|
| Secondary electronic resolution | 3.0nm (acceleration voltage=30kV, WD=5mm high vacuum mode) | |
| 7.0nm (acceleration voltage=3kV, WD=5mm high vacuum mode) | ||
| Backscattered electron resolution | 4.0nm (acceleration voltage=30kV, WD=5mm low vacuum mode) | |
| 10.0nm (acceleration voltage=5kV, WD=5mm high vacuum mode) | ||
| magnification | 5-300000 times (film magnification)*5) | |
| 7-800000 times (monitor display magnification)*6) | ||
| accelerating voltage | 0.3 - 30kV | |
| Variable pressure range | 6 - 650Pa | |
| The largest sample size | Diameter 200mm | |
| sample stage | X | 0 - 100mm |
| Y | 0 - 50mm | |
| Z | 5 - 65mm | |
| R | 360° | |
| T | -20° - 90° | |
| Observable Area | Diameter 130mm (for rotation and use) | |
| Zui Large Sample Height | 80mm(WD=10mm) | |
| Madatai | 5-axis standard configuration | |
| Electronic optical system | electron gun | Pre aligned tungsten filament |
| Objective aperture | 4-hole movable aperture | |
| Probe detector | Everhart Thornley Secondary Electron Detector | |
| High sensitivity semiconductor backscattered electron detector | ||
| EDX analysis WD | 10mm (extraction angle 35 °) | |
| image display | operating system | Windows® 7*7(Subject to change without prior notice) |
| Image display mode | Full screen mode (1280 × 960 pixels) | |
| Small screen mode (800 × 600 pixels) | ||
| Dual image display (800 × 600 pixels) | ||
| Four screen display (640 × 480 pixels) | ||
| Signal mixing mode | ||
| exhaust system | operation | Fully automatic exhaust |
| Turbo molecular pump | 210 liters/second x 1 | |
| mechanical pump | 135L/min(162L/min,60Hz)× 1 | |
(*2)Specify the magnification with a display size of 127mm × 95mm (image size 4 '× 5')
(*3)Using a display size of 345mm × 259mm (pixels 1280 × 960) to specify the magnification ratio
(*4):Windows ® It is a registered trademark of Microsoft Corporation in the United States and other countries
Application fields:
1. Biomedical Science
2. Food hygiene
3. Electronic Semiconductor
4. Automobile manufacturing
5. New energy



